Next-generation Semiconductor F-RAM Device Development

A new memory device that solved the defects of F-RAM (next-generation semiconductor memory device) was developed by a domestic research team first.

The research team, led by Professor Chang Hyun-Myung of Material Sciences and Engineering Department of Pohang University of Science and Technology, announced on August 13 that they developed a F-RAM memory device which can function even after more than 65 billion times read and write processes by using Lead-Zinc-Titanium (PZT) thin film.

Such research results have been published in `Applied Physics Letter` dated August 13, a world-class applied physics journal.

Unlike D-RAM, F-RAM does not require a separate internal power supply. Thus, it is expected to help miniaturize electronic devices as the next generation semiconductor. However, world-class semiconductor manufacturers, including Samsung Electronics, Toshiba and Hitachi, have suffered a so-called `electrical fatigue`, in which stored information disappears rapidly after billions of `read and write` processes. Professor Chang`s team said that such problem was overcome by inserting a super-thin PZT film with 40 nm (1nm = a billionth meter) thick during the PZT coating process (which holds for the characteristics of F-RAM) for silicon semiconductor.

In addition, they took advantage of the platinum electrode that has been used for the existing D-RAM manufacturing process, instead of iridium (rare element) electrode that was needed for the conventional F-RAM fabrication.

Professor Chang said, ``While the conventional D-RAM computer needs 1 – 2 minutes for booting, the screen of the F-RAM computer will be on as soon as the power is on. From next year, Samsung Electronics will produce F-RAMs, taking advantage of D-RAM manufacturing processes.``

Lee Young-Wan puset@donga.com