Samsung to open era of 1G DRAM

Samsung Electronics succeeded in developing an epoch-making semiconductor processing technology, which will advance the age of 1Gb (gigabit) DRAM (dynamic random access memory) chip. Samsung said on July 18 that it announced the 0.11 micron processing technology for 1Gb DRAM at the 20th VLST (Very Large Scale Integration) symposium in Hawaii last month.

The thinner is the circuit width carved onto a wafer, the higher density of semiconductors is gained. For this reason, global chipmakers have been competing to make the circuit width thinner.

Up to now, the commercialization of 1Gb DRAM has been known to require the processing technology for below 0.10-micron circuit. Samsung¡¯s development of 0.11 micron processing technology for 1Gb DRAM, however, makes it possible to mass-produce 1Gb DRAM without any replacement of the existing facilities.

The VLSI symposium, which was established in 1981, is the world-renowned international conference, where the global semiconductor big names such as Intel, NEC, IBM and Toshiba have participated.