Posted October. 16, 2002 22:54,
On October 16, Samsung Electronics announced that it developed F-RAM, the next generation semiconductor memory for mobile (Ferroelectric RAM· ferroelectricity Memory) for the first time in the world.
Samsung Electronics testified that F-RAM can be used to the mobile equipment for the first time in the industry, as Samsung Electronics has operate the mobile phone through 4Mb F-RAM applying the technology and the product technology of 32Mb(highest integrity in the world).
F-RAM is the product featuring a nonvolatile, low-voltage and low-power and high speed unlike the existing memory such as D-RAM, S-RAM and flash memory.
Because of a simple manufacturing process and low manufacturing cost, there is the severe development competition among companies as it is evaluated as an optimum memory semiconductor for the mobile equipment.
High capacity F-RAM of Mega will be used to the products of mobile phone, PDA, smart phone and smart card. The market scale is estimated at USD 3.3 billion in 2004, and 26.7 billion in 2008 increasing by five times and 40 times respectively.
Samsung Electronics will set to the work in earnest to occupy the F-RAM market from next year based on the technical predominance, and will plan to accelerate F-RAM development of above 64M.