Samsung Mass-Produce Next Generation Semi-Conductor

Samsung Electronics set up a mass-production system for the next-generational 300 mm (12 inches) wafer line for the first time in the world.

Samsung also started mass-production of the higher memory capacity semi-conductor, 512 Megabyte Double Data Rate (DDR) D RAM.

Samsung Electronics held a press conference yesterday to release its strategy for the next generation memory semi-conductor projects and revealed the plan to increase its sales up to 20 billion dollars in the memory sectors by 2005.

Hwang Chang-Gyu, CEO of Samsung Electronics Memory Sector, said ``Samsung Electronics began its mass production of 512 M D RAM as well as the mass production of the memory semi-conductors by using 300 mm wafer.``

The company had performed a test operation for the mass production of 300 mm wafer in the 11th line of the company`s 2nd complex in Hwa-Seung in Kyonggi since July and began supplying its products to the large computer companies from September. Wafer refers to the silicon thin film used to make semi-conductor chips.

Mr. Hwang explained, ``the productivity of the 300 mm line is 2.5 times higher than the current 200 mm (8 inches) lines. Consequently, the production cost will be lowered. The early operation of the 300 mm lines will help to increase the price competitiveness of the company.``

The company also decided to reduce the production of D RAM to 25 percent by 2005 and to diversify the memory sectors by increasing the solution D RAM up to 25 percent and the portion of S RAM and Flesh Memory production to 50 percent.

yhchoi65@donga.com