Samsung Electronics –Development of the Next Generation Semiconductor

At 25th of June, Samsung Electronics announced that the company had developed a memory semiconductor of QDR (Quad Data Rate) Ⅱ S Ram firstly in the industry. QDR Ⅱis a S Ram with the maximum capacity of 36 Mega, and the speed of 250 MHz. It is a high functional product.

QDR S Ram is designed to be able to process 4 data at maximum for one SYNC Signal. So it is faster twice than DDR (Double Data Rate) S Ram, four times than ordinary S Ram.

Samsung Electronics has the plan to begin mass production from the second half of this year and occupy 50% of the market of S Ram for World networks.